Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy
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چکیده
منابع مشابه
CHARACTERIZATION OF NATIVE VACANCIES IN EPITAXIAL GaN AND ZnSe SEMI- CONDUCTOR LAYERS BY POSITRON ANNIHILATION SPECTROSCOPY
Point defects in epitaxial GaN and ZnSe semiconductor layers have been studied using a low-energy positron beam. Ga vacancies are found to be present in n-type GaN grown by metal organic chemical vapor deposition, where the conductivity is due to residual oxygen. When n-type silicon impurity doping is done, clearly less vacancies are observed. In Mgdoped p-type and semi-insulating materials the...
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We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources ~for Ga, Al, and Er! and a plasma gas source for N2. The emission spectrum of the GaN:Er...
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Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E150.23460.006, E250.57860.006, E350.65760.031, E450.96160.026, and E550.24060.012 eV. Among these, the levels labeled E1 , E2 , and E3 are interpreted as corresponding to deep levels...
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